STW48NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STW48NM60N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 212 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO247

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STW48NM60N Datasheet (PDF)

..1. Size:712K st
stw48nm60n.pdf

STW48NM60NN-channel 600 V, 0.055 typ., 44 A MDmesh II Power MOSFET in a TO-247 packageDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTJmax maxSTW48NM60N 650 V

..2. Size:211K inchange semiconductor
stw48nm60n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW48NM60NFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

8.1. Size:760K st
stw48n60m2-4.pdf

STW48N60M2-4 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2-4 650 V 0.07 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% a

8.2. Size:433K st
stw48n60m6-4.pdf

STW48N60M6-4DatasheetN-channel 600 V, 61 m typ., 39 A, MDmesh M6 Power MOSFET in a TO2474 packageFeaturesVDS RDS(on) max. IDOrder codeSTW48N60M6-4 600 V 69 m 39 A Reduced switching losses Lower RDS(on) per area vs previous generation432 Low gate input resistance1 100% avalanche testedTO247-4 Zener-protectedDrain(1) Excellent swit

8.3. Size:780K st
stw48n60m2.pdf

STW48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS32 100% avalanche tested 1 Zener-protected TO-247Applications Switchin

8.4. Size:717K st
stw48n60dm2.pdf

STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness

8.5. Size:461K st
stw48n60m6.pdf

STW48N60M6DatasheetN-channel 600 V, 61 m typ., 39 A, MDmesh M6 Power MOSFET in a TO247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW48N60M6 600 V 69 m 39 A Reduced switching losses32 Lower RDS(on) per area vs previous generation1 Low gate input resistanceTO-247 100% avalanche tested Zener-protectedD(2, TAB)Applications Switchin

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