All MOSFET. STW48NM60N Datasheet

 

STW48NM60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW48NM60N
   Marking Code: 48NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 124 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 212 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247

 STW48NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW48NM60N Datasheet (PDF)

 ..1. Size:712K  st
stw48nm60n.pdf

STW48NM60N STW48NM60N

STW48NM60NN-channel 600 V, 0.055 typ., 44 A MDmesh II Power MOSFET in a TO-247 packageDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTJmax maxSTW48NM60N 650 V

 ..2. Size:211K  inchange semiconductor
stw48nm60n.pdf

STW48NM60N STW48NM60N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW48NM60NFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 8.1. Size:760K  st
stw48n60m2-4.pdf

STW48NM60N STW48NM60N

STW48N60M2-4 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2-4 650 V 0.07 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% a

 8.2. Size:433K  st
stw48n60m6-4.pdf

STW48NM60N STW48NM60N

STW48N60M6-4DatasheetN-channel 600 V, 61 m typ., 39 A, MDmesh M6 Power MOSFET in a TO2474 packageFeaturesVDS RDS(on) max. IDOrder codeSTW48N60M6-4 600 V 69 m 39 A Reduced switching losses Lower RDS(on) per area vs previous generation432 Low gate input resistance1 100% avalanche testedTO247-4 Zener-protectedDrain(1) Excellent swit

 8.3. Size:780K  st
stw48n60m2.pdf

STW48NM60N STW48NM60N

STW48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS32 100% avalanche tested 1 Zener-protected TO-247Applications Switchin

 8.4. Size:717K  st
stw48n60dm2.pdf

STW48NM60N STW48NM60N

STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness

 8.5. Size:461K  st
stw48n60m6.pdf

STW48NM60N STW48NM60N

STW48N60M6DatasheetN-channel 600 V, 61 m typ., 39 A, MDmesh M6 Power MOSFET in a TO247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW48N60M6 600 V 69 m 39 A Reduced switching losses32 Lower RDS(on) per area vs previous generation1 Low gate input resistanceTO-247 100% avalanche tested Zener-protectedD(2, TAB)Applications Switchin

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