BSB014N04LX3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSB014N04LX3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.4 nS
Cossⓘ - Capacitancia de salida: 2400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Paquete / Cubierta: WDSON2
BSB014N04LX3G Datasheet (PDF)
bsb014n04lx3g.pdf

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n-Channel Power MOSFETOptiMOSBSB015N04NX3 G Data Sheet2.3, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB015N04NX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make
Otros transistores... STY30NK90Z , STY60NK30Z , STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , 12N60 , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , BSB024N03LXG , BSB028N06NN3G , BSB053N03LPG , BSC010NE2LS , BSC011N03LS .
History: PJP5NA50
History: PJP5NA50



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