BSB014N04LX3G Datasheet and Replacement
Type Designator: BSB014N04LX3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 2400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: WDSON2
BSB014N04LX3G Datasheet (PDF)
bsb014n04lx3g.pdf

n-Channel Power MOSFETOptiMOSBSB014N04LX3 G Data Sheet2.2, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB014N04LX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make
bsb017n03lx3 bsb017n03lx3g.pdf

n-Channel Power MOSFETOptiMOSBSB017N03LX3 Data Sheet2.2, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB017N03LX3 G1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make Op
bsb015n04nx3g.pdf

n-Channel Power MOSFETOptiMOSBSB015N04NX3 G Data Sheet2.3, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB015N04NX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make
Datasheet: STY30NK90Z , STY60NK30Z , STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , 12N60 , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , BSB024N03LXG , BSB028N06NN3G , BSB053N03LPG , BSC010NE2LS , BSC011N03LS .
History: STP13NK50Z
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History: STP13NK50Z



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