Справочник MOSFET. BSB014N04LX3G

 

BSB014N04LX3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSB014N04LX3G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8.4 ns
   Cossⓘ - Выходная емкость: 2400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0014 Ohm
   Тип корпуса: WDSON2

 Аналог (замена) для BSB014N04LX3G

 

 

BSB014N04LX3G Datasheet (PDF)

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 bsb014n04lx3g.pdf

BSB014N04LX3G BSB014N04LX3G

n-Channel Power MOSFETOptiMOSBSB014N04LX3 G Data Sheet2.2, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB014N04LX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

 9.1. Size:548K  infineon
 bsb019n03lx.pdf

BSB014N04LX3G BSB014N04LX3G

& " + $ !#& '$>EFeatures 0 VDST +5 9E88 C?4G

 9.2. Size:1548K  infineon
 bsb017n03lx3 bsb017n03lx3g.pdf

BSB014N04LX3G BSB014N04LX3G

n-Channel Power MOSFETOptiMOSBSB017N03LX3 Data Sheet2.2, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB017N03LX3 G1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make Op

 9.3. Size:1566K  infineon
 bsb015n04nx3g.pdf

BSB014N04LX3G BSB014N04LX3G

n-Channel Power MOSFETOptiMOSBSB015N04NX3 G Data Sheet2.3, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB015N04NX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

 9.4. Size:1460K  infineon
 bsb012ne2lxi.pdf

BSB014N04LX3G BSB014N04LX3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXICanPAK MX-size1 DescriptionFeatures Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (

 9.5. Size:555K  infineon
 bsb012n03lx3g.pdf

BSB014N04LX3G BSB014N04LX3G

& " + $ !#& '$>EFeatures 0 VDSU * CG

 9.6. Size:1445K  infineon
 bsb012ne2lx.pdf

BSB014N04LX3G BSB014N04LX3G

n-Channel Power MOSFETOptiMOSBSB012NE2LX Data Sheet2.3, 2011-09-16Final Industrial & MultimarketOptiMOS Power-MOSFETBSB012NE2LX1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

 9.7. Size:563K  infineon
 bsb013ne2lxi.pdf

BSB014N04LX3G BSB014N04LX3G

BSB013NE2LXIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized SyncFET for high performance Buck converterRDS(on),max 1.3 mW Integrated monolithic Schottky like diode ID 163 A Low profile (

 9.8. Size:300K  infineon
 bsb012n03lx3.pdf

BSB014N04LX3G BSB014N04LX3G

BSB012N03LX3 G OptiMOSTM3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for high switching frequency DC/DC converterR 1.2mDS(on),max Very low on-resistance RDS(on)I 180 AD Excellent gate charge x R product (FOM)DS(on)MG-WDSON-2 Low parasitic inductance Low profile (

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