BSB019N03LXG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSB019N03LXG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.8 nS
Cossⓘ - Capacitancia de salida: 2200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
Paquete / Cubierta: WDSON2
- Selección de transistores por parámetros
BSB019N03LXG Datasheet (PDF)
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Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: TPW60R160M | MSJU11N65 | SFP740 | TSM4N80CZ | SIHFI644G | IRFS640B | JFFM13N65D
History: TPW60R160M | MSJU11N65 | SFP740 | TSM4N80CZ | SIHFI644G | IRFS640B | JFFM13N65D



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