BSB019N03LXG Specs and Replacement
Type Designator: BSB019N03LXG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 2200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: WDSON2
BSB019N03LXG substitution
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BSB019N03LXG datasheet
bsb019n03lx.pdf
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n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.2, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make ... See More ⇒
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n-Channel Power MOSFET OptiMOS BSB015N04NX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB015N04NX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make ... See More ⇒
Detailed specifications: STY60NM60, STY80NM60N, STZ150NF55T, BSB012N03LX3G, BSB012NE2LX, BSB014N04LX3G, BSB015N04NX3G, BSB017N03LX3G, IRF4905, BSB024N03LXG, BSB028N06NN3G, BSB053N03LPG, BSC010NE2LS, BSC011N03LS, BSC014N03LSG, BSC014N03MSG, BSC016N03LSG
Keywords - BSB019N03LXG MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BSB028N06NN3G
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