BSB019N03LXG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSB019N03LXG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7.8 ns
Cossⓘ - Выходная емкость: 2200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
Тип корпуса: WDSON2
Аналог (замена) для BSB019N03LXG
BSB019N03LXG Datasheet (PDF)
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Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918