BSC019N02KSG Todos los transistores

 

BSC019N02KSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC019N02KSG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 104 W

Tensión drenaje-fuente (Vds): 20 V

Corriente continua de drenaje (Id): 100 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 64 nC

Resistencia drenaje-fuente RDS(on): 0.00195 Ohm

Empaquetado / Estuche: SuperSO8

Búsqueda de reemplazo de MOSFET BSC019N02KSG

 

BSC019N02KSG Datasheet (PDF)

1.1. bsc019n02ksgrev1.41.pdf Size:666K _infineon

BSC019N02KSG
BSC019N02KSG

% ! % D #:A0< &<,9=4=>:< #<:/?.> %?88,2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3

2.1. bsc019n04nsg rev1.4.pdf Size:640K _infineon

BSC019N02KSG
BSC019N02KSG

% ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,7 &( , - 6?A ,&), 1 m D n) m x P ( @C9=9I54 C538>?E5AC5AB 1 D 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?>B G? D ON? P ' 381>>5< '?A=1< <5E5< P G35<<5>C 71C5 381A75 G @A?4D3C ( & D n) P .5AH A5B9BC1>35 D n) P ,D@5A9?A C85A=1< A5B9BC1>35 P E1<1>385 C5BC54 P )2 6A55

 5.1. bsc017n04nsg rev1.24.pdf Size:639K _infineon

BSC019N02KSG
BSC019N02KSG

% ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,7 &( , - 6?A ,&), 1 7 m D n) m x P ( @C9=9I54 C538>?E5AC5AB 1 D 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?>B G? D ON? P ' 381>>5< P '?A=1< <5E5< P G35<<5>C 71C5 381A75 G @A?4D3C ( & D n) P .5AH A5B9BC1>35 D n) P ,D@5A9?A C85A=1< A5B9BC1>35 P E1<1>385 C5BC54 P )2 6

5.2. bsc014n03msg rev1.5.pdf Size:540K _infineon

BSC019N02KSG
BSC019N02KSG

% ! % D %0<40= #:A0< "% & #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' 0 1 4 m D n) m x G S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. 0 1 7 G S 3H3>3@5:7 F7EF76 1 D S ) 5:3@@7> G? D ON? S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F

 5.3. bsc010ne2ls rev2.1.pdf Size:1611K _infineon

BSC019N02KSG
BSC019N02KSG

n-Channel Power MOSFET OptiMOS BSC010NE2LS Data Sheet 2.1, 2011-09-19 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC010NE2LS 1 Description OptiMOS25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V t

5.4. bsc016n04lsg rev2.0.pdf Size:311K _infineon

BSC019N02KSG
BSC019N02KSG

BSC016N04LS G OptiMOS3 Power-Transistor Product Summary V 40 V Features DS R 1.6 m? Fast switching MOSFET for SMPS DS(on),max I 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal res

 5.5. bsc018ne2ls rev2.1.pdf Size:1615K _infineon

BSC019N02KSG
BSC019N02KSG

n-Channel Power MOSFET OptiMOS BSC018NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC018NE2LS 1 Description OptiMOS25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V t

5.6. bsc014n03ls rev1.3.pdf Size:700K _infineon

BSC019N02KSG
BSC019N02KSG

& " & E $;B1= !#& ' $=;0@/? &@99-=y Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 4 m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= Q &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 ,

5.7. bsc016n03ls rev1.28.pdf Size:679K _infineon

BSC019N02KSG
BSC019N02KSG

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= Q &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 ,

5.8. bsc011n03ls rev2.1.pdf Size:1620K _infineon

BSC019N02KSG
BSC019N02KSG

n-Channel Power MOSFET OptiMOS BSC011N03LS Data Sheet 2.1, 2011-09-23 Preliminary Industrial & Multimarket OptiMOS Power-MOSFET BSC011N03LS 1 Description OptiMOS30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS

5.9. bsc016n03msg rev1.17.pdf Size:542K _infineon

BSC019N02KSG
BSC019N02KSG

% ! % #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' 0 G S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. 1 D S 3H3>3@5:7 F7EF76 S ) 5:3@@7> G? D ON? S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F:7D?3

5.10. bsc018n04lsg rev1.4.pdf Size:651K _infineon

BSC019N02KSG
BSC019N02KSG

& " & E $;B1= '=-:>5>?;= $=;0@/? &@99-=D 4 Features D 1 mW Q 2CD CG:D49:?8 ') - . 7@B -'*- D n) m x 1 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H , - @? AB@5E4D ) ' Q /6BI =@G @? B6C:CD2?46 , - @? Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 D6CD65 Q *3 7B66 A=2D

Otros transistores... BSC014N03LSG , BSC014N03MSG , BSC016N03LSG , BSC016N03MSG , BSC016N04LSG , BSC017N04NSG , BSC018N04LSG , BSC018NE2LS , 2N7002 , BSC019N04NSG , BSC020N025SG , BSC020N03LSG , BSC020N03MSG , BSC022N03SG , BSC024NE2LS , BSC025N03LSG , BSC025N03MSG .

 
Back to Top

 


BSC019N02KSG
  BSC019N02KSG
  BSC019N02KSG
  BSC019N02KSG
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top