BSC019N02KSG PDF and Equivalents Search

 

BSC019N02KSG Specs and Replacement

Type Designator: BSC019N02KSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 187 nS

Cossⓘ - Output Capacitance: 2700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm

Package: TDSON8

BSC019N02KSG substitution

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BSC019N02KSG datasheet

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BSC019N02KSG

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BSC019N02KSG

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BSC019N02KSG

BSC019N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 37 nC Superior thermal resistance QG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒

 6.2. Size:377K  infineon
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Detailed specifications: BSC014N03LSG, BSC014N03MSG, BSC016N03LSG, BSC016N03MSG, BSC016N04LSG, BSC017N04NSG, BSC018N04LSG, BSC018NE2LS, IRFB3607, BSC019N04NSG, BSC020N025SG, BSC020N03LSG, BSC020N03MSG, BSC022N03SG, BSC024NE2LS, BSC025N03LSG, BSC025N03MSG

Keywords - BSC019N02KSG MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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