BSC0909NS Datasheet. Equivalente

 ..1. Size:608K  infineon
 bsc0909ns.pdf

BSC0909NS OptiMOS Power-MOSFET Product Summary Features VDS 34 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 9.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 11.8 100% Avalanche tested ID 44 A Improved switching behaviour PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate c

 ..2. Size:1638K  infineon
 bsc0909ns rev3.2.pdf

n-Channel Power MOSFET OptiMOS BSC0909NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0909NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 8.1. Size:816K  infineon
 bsc0902ns.pdf

BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8

 8.2. Size:521K  infineon
 bsc090n03lsg.pdf

BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

 8.3. Size:1609K  infineon
 bsc0901ns bsc0901ns .pdf

n-Channel Power MOSFET OptiMOS BSC0901NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0901NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 8.4. Size:791K  infineon
 bsc0904nsi.pdf

BSC0904NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 3.7 mW Integrated monolithic Schottky-like diode ID 78 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 12 nC 100% avalanche tested QG(0V..10V) 17 nC Superior thermal resistance N-channel Qualified accordin

 8.5. Size:1526K  infineon
 bsc0906ns.pdf

n-Channel Power MOSFET OptiMOS BSC0906NS Data Sheet 2.0, 2011-06-10 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0906NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 8.6. Size:686K  infineon
 bsc090n03ls.pdf

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 8.7. Size:680K  infineon
 bsc090n03msg.pdf

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 8.8. Size:658K  infineon
 bsc0902nsi.pdf

BSC0902NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 17 nC 100% avalanche tested QG(0V..10V) 24 nC Superior thermal resistance N-channel Qualified accordi

 8.9. Size:1630K  infineon
 bsc0908ns rev3.2.pdf

n-Channel Power MOSFET OptiMOS BSC0908NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0908NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 8.10. Size:580K  infineon
 bsc0901nsi.pdf

BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance N-channel Qualified according to JEDE