All MOSFET. BSC0909NS Datasheet

 

BSC0909NS Datasheet and Replacement


   Type Designator: BSC0909NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 34 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TDSON8
 

 BSC0909NS substitution

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BSC0909NS Datasheet (PDF)

 ..1. Size:608K  infineon
bsc0909ns.pdf pdf_icon

BSC0909NS

BSC0909NSOptiMOS Power-MOSFETProduct Summary Features VDS 34 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 9.2 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 11.8 100% Avalanche testedID 44 A Improved switching behaviourPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate c

 ..2. Size:1638K  infineon
bsc0909ns rev3.2.pdf pdf_icon

BSC0909NS

n-Channel Power MOSFETOptiMOSBSC0909NS Data Sheet3.2, 2011-09-26Final Industrial & MultimarketOptiMOS Power-MOSFETBSC0909NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

 8.1. Size:816K  infineon
bsc0902ns.pdf pdf_icon

BSC0909NS

BSC0902NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 16 nC Superior thermal resistanceQG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

 8.2. Size:521K  infineon
bsc090n03lsg.pdf pdf_icon

BSC0909NS

BSC090N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 48 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

Datasheet: BSC080N03MSG , BSC080P03LSG , BSC082N10LSG , BSC084P03NS3G , BSC084P03NS3EG , BSC0901NS , BSC0902NS , BSC0908NS , IRF840 , BSC090N03LSG , BSC090N03MSG , BSC093N04LSG , BSC094N03SG , BSC100N03LSG , BSC100N03MSG , BSC100N06LS3G , BSC100N10NSFG .

History: PHD98N03LT | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S

Keywords - BSC0909NS MOSFET datasheet

 BSC0909NS cross reference
 BSC0909NS equivalent finder
 BSC0909NS lookup
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