BSC105N10LSFG Datasheet. Equivalente

 ..1. Size:658K  infineon
 bsc105n10lsf9 bsc105n10lsfg.pdf

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 9.1. Size:394K  infineon
 bsc100n06ls3g.pdf

Type BSC100N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 10 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli

 9.2. Size:654K  infineon
 bsc100n10nsf8 bsc100n10nsfg.pdf

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 9.3. Size:524K  infineon
 bsc100n03msg.pdf

BSC100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS

 9.4. Size:485K  infineon
 bsc100n03ms.pdf

BSC100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS

 9.5. Size:689K  infineon
 bsc100n03ls.pdf

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 9.6. Size:585K  infineon
 bsc100n06ls3.pdf

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 9.7. Size:655K  infineon
 bsc109n10ns3 bsc109n10ns3g.pdf

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