BSC105N10LSFG PDF and Equivalents Search

 

BSC105N10LSFG PDF Specs and Replacement


   Type Designator: BSC105N10LSFG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TDSON8
 

 BSC105N10LSFG substitution

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BSC105N10LSFG PDF Specs

 ..1. Size:658K  infineon
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BSC105N10LSFG

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 9.1. Size:394K  infineon
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BSC105N10LSFG

Type BSC100N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 10 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli... See More ⇒

 9.2. Size:654K  infineon
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BSC105N10LSFG

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 9.3. Size:524K  infineon
bsc100n03msg.pdf pdf_icon

BSC105N10LSFG

BSC100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS... See More ⇒

Detailed specifications: BSC090N03LSG , BSC090N03MSG , BSC093N04LSG , BSC094N03SG , BSC100N03LSG , BSC100N03MSG , BSC100N06LS3G , BSC100N10NSFG , IRLZ44N , BSC109N10NS3G , BSC110N06NS3G , BSC118N10NSG , BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG .

Keywords - BSC105N10LSFG MOSFET specs

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