BSC110N06NS3G Todos los transistores

 

BSC110N06NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSC110N06NS3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TDSON8
 

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BSC110N06NS3G Datasheet (PDF)

 ..1. Size:393K  infineon
bsc110n06ns3g.pdf pdf_icon

BSC110N06NS3G

TypeBSC110N06NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 11 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compl

 2.1. Size:591K  infineon
bsc110n06ns3.pdf pdf_icon

BSC110N06NS3G

pe $ $ TM "9@/; %;+877+;BFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 11m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 7.1. Size:976K  1
bsc110n15ns5.pdf pdf_icon

BSC110N06NS3G

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig

 7.2. Size:976K  infineon
bsc110n15ns5.pdf pdf_icon

BSC110N06NS3G

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig

Otros transistores... BSC093N04LSG , BSC094N03SG , BSC100N03LSG , BSC100N03MSG , BSC100N06LS3G , BSC100N10NSFG , BSC105N10LSFG , BSC109N10NS3G , IRF630 , BSC118N10NSG , BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , BSC130P03LSG .

History: PDC3903X | PZ5203QV | HTD2K1P10 | 2SK4212-ZK | FKP253 | PTF8N65 | BRCS120N03DP

 

 
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