BSC110N06NS3G Todos los transistores

 

BSC110N06NS3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC110N06NS3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TDSON8

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BSC110N06NS3G datasheet

 ..1. Size:393K  infineon
 bsc110n06ns3g.pdf pdf_icon

BSC110N06NS3G

Type BSC110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 11 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compl

 2.1. Size:591K  infineon
 bsc110n06ns3.pdf pdf_icon

BSC110N06NS3G

pe $ $ TM "9@/; %;+877+;B Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 11 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 7.1. Size:976K  1
 bsc110n15ns5.pdf pdf_icon

BSC110N06NS3G

BSC110N15NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Ideal for hig

 7.2. Size:976K  infineon
 bsc110n15ns5.pdf pdf_icon

BSC110N06NS3G

BSC110N15NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Ideal for hig

MOSTRAR MÁS

Otros transistores... BSC093N04LSG , BSC094N03SG , BSC100N03LSG , BSC100N03MSG , BSC100N06LS3G , BSC100N10NSFG , BSC105N10LSFG , BSC109N10NS3G , IRF640N , BSC118N10NSG , BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , BSC130P03LSG .

 

 

 


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