BSC110N06NS3G Todos los transistores

 

BSC110N06NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC110N06NS3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 50 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 25 nC

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: SuperSO8

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BSC110N06NS3G Datasheet (PDF)

1.1. bsc110n06ns3 rev2.3.pdf Size:591K _infineon

BSC110N06NS3G
BSC110N06NS3G

pe $ $ TM "9@/; %;+8<3<=9; ";9.>-= $>77+;B Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 11 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ,E@5B9?B D85B=1< B5C9CD1>35 Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9

5.1. bsc118n10nsrev1.08 pdf.pdf Size:439K _infineon

BSC110N06NS3G
BSC110N06NS3G

BSC118N10NS G OptiMOS2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency

5.2. bsc119n03s rev1.91 g.pdf Size:635K _infineon

BSC110N06NS3G
BSC110N06NS3G

% ! % D #:A0< &<,9=4=>:< #<:/?.> %?88,:J65 D649?@=@8I 7@B ?@D63@@< 4@?F6BD6BC A D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C PG?TDSON?8 Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' DS(on) Q /6BI =@G @? B6C:CD2?46 DS(on) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3

Otros transistores... BSC093N04LSG , BSC094N03SG , BSC100N03LSG , BSC100N03MSG , BSC100N06LS3G , BSC100N10NSFG , BSC105N10LSFG , BSC109N10NS3G , IRF1404 , BSC118N10NSG , BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , BSC130P03LSG .

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Recientemente añadidas las descripciónes de los transistores:

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