BSC110N06NS3G MOSFET Datasheet: N-Ch, 60V, 12A. Full specification with pinout and replacement list

BSC110N06NS3G Specs and Replacement

Type Designator: BSC110N06NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TDSON8

BSC110N06NS3G substitution

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BSC110N06NS3G datasheet

..1. Size:393K infineon
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Type BSC110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 11 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compl... See More ⇒

2.1. Size:591K infineon
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pe $ $ TM "9@/; %;+877+;B Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 11 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒

7.1. Size:976K 1
bsc110n15ns5.pdf pdf_icon

BSC110N15NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Ideal for hig... See More ⇒

7.2. Size:976K infineon
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