BSP315P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP315P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 5.2 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET BSP315P
BSP315P Datasheet (PDF)
bsp315p.pdf
Preliminary dataBSP 315 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.8 Avalanche ratedContinuous drain current ID -1.17 A Logic Level4 dv/dt rated321VPS05163Type Package Ordering Code Pin 1 Pin2/4 PIN 3BSP 315 P SOT-223 Q67042-S4004 G D SMaximum
bsp315p .pdf
BSP315PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.8 Avalanche rated Continuous drain current ID -1.17 A Logic Level4 dv/dt ratedPin 1 Pin2/4 PIN 33 Qualified according to AEC Q101 2G D S1VPS05163Type Package Tape and Reel In
bsp315p.pdf
BSP315Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete
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bsp30 bsp31 bsp32 bsp33.pdf
BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH
bsp31 bsp33.pdf
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bsp31 bsp32 bsp33.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsp318.pdf
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SOT223 PNP SILICON PLANARBSP31MEDIUM POWER TRANSISTORSBSP33ISSUE 3 FEBRUARY 1996 T T C T I D T I D i i IIECBABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T T T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI II V V I V I V I II i V V I V I 8
bsp316p.pdf
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bsp317.pdf
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bsp318s.pdf
Rev 2.3BSP318SSIPMOS Small-Signal-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.09 Avalanche rated Continuous drain current ID 2.6 A Logic Level4 dv/dt ratedPb-free lead plating; RoHS compliant 3Pin 1 Pin 2, 4 PIN 3 Qualified according to AEC Q101
bsp316.pdf
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bsp317p.pdf
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bsp319.pdf
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