All MOSFET. BSP315P Datasheet

 

BSP315P Datasheet and Replacement


   Type Designator: BSP315P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 1.17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.2 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SOT223
 

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BSP315P Datasheet (PDF)

 ..1. Size:94K  infineon
bsp315p.pdf pdf_icon

BSP315P

Preliminary dataBSP 315 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.8 Avalanche ratedContinuous drain current ID -1.17 A Logic Level4 dv/dt rated321VPS05163Type Package Ordering Code Pin 1 Pin2/4 PIN 3BSP 315 P SOT-223 Q67042-S4004 G D SMaximum

 ..2. Size:471K  infineon
bsp315p .pdf pdf_icon

BSP315P

BSP315PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.8 Avalanche rated Continuous drain current ID -1.17 A Logic Level4 dv/dt ratedPin 1 Pin2/4 PIN 33 Qualified according to AEC Q101 2G D S1VPS05163Type Package Tape and Reel In

 ..3. Size:818K  cn vbsemi
bsp315p.pdf pdf_icon

BSP315P

BSP315Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete

 9.1. Size:49K  philips
bsp31 bsp32 bsp33 3.pdf pdf_icon

BSP315P

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP31; BSP32; BSP33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BSP31; BSP32; BSP33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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