BSZ050N03LSG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSZ050N03LSG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 790 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TSDSON8
Búsqueda de reemplazo de BSZ050N03LSG MOSFET
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BSZ050N03LSG datasheet
bsz050n03lsg.pdf
BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
bsz050n03ls.pdf
BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
bsz050n03ms.pdf
BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product
bsz050n03msg.pdf
BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product
Otros transistores... BSS84P , BSS84PW , BSV236SP , BSZ019N03LS , BSZ035N03LSG , BSZ035N03MSG , BSZ040N04LSG , BSZ042N04NSG , IRFP250N , BSZ050N03MSG , BSZ058N03LSG , BSZ058N03MSG , BSZ067N06LS3G , BSZ076N06NS3G , BSZ086P03NS3G , BSZ086P03NS3EG , BSZ088N03LSG .
History: BSZ040N04LSG | WM04N50M | AGM3416E
History: BSZ040N04LSG | WM04N50M | AGM3416E
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