BSZ050N03LSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSZ050N03LSG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 790 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TSDSON8
Búsqueda de reemplazo de MOSFET BSZ050N03LSG
BSZ050N03LSG Datasheet (PDF)
bsz050n03lsg.pdf
BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsz050n03ls.pdf
BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsz050n03ms.pdf
BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product
bsz050n03msg.pdf
BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918