BSZ050N03LSG Todos los transistores

 

BSZ050N03LSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSZ050N03LSG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 790 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TSDSON8
 

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BSZ050N03LSG Datasheet (PDF)

 ..1. Size:327K  infineon
 bsz050n03lsg.pdf pdf_icon

BSZ050N03LSG

BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 3.1. Size:325K  infineon
 bsz050n03ls.pdf pdf_icon

BSZ050N03LSG

BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 5.1. Size:318K  infineon
 bsz050n03ms.pdf pdf_icon

BSZ050N03LSG

BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

 5.2. Size:320K  infineon
 bsz050n03msg.pdf pdf_icon

BSZ050N03LSG

BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BUK7K17-60E | AP15T20GI-HF | PPM523T201E0

 

 
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