BSZ050N03LSG Specs and Replacement
Type Designator: BSZ050N03LSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TSDSON8
BSZ050N03LSG substitution
- MOSFET ⓘ Cross-Reference Search
BSZ050N03LSG datasheet
bsz050n03lsg.pdf
BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
bsz050n03ls.pdf
BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
bsz050n03ms.pdf
BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product ... See More ⇒
bsz050n03msg.pdf
BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product ... See More ⇒
Detailed specifications: BSS84P, BSS84PW, BSV236SP, BSZ019N03LS, BSZ035N03LSG, BSZ035N03MSG, BSZ040N04LSG, BSZ042N04NSG, IRFP250N, BSZ050N03MSG, BSZ058N03LSG, BSZ058N03MSG, BSZ067N06LS3G, BSZ076N06NS3G, BSZ086P03NS3G, BSZ086P03NS3EG, BSZ088N03LSG
Keywords - BSZ050N03LSG MOSFET specs
BSZ050N03LSG cross reference
BSZ050N03LSG equivalent finder
BSZ050N03LSG pdf lookup
BSZ050N03LSG substitution
BSZ050N03LSG replacement
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