All MOSFET. BSZ050N03LSG Datasheet

 

BSZ050N03LSG Datasheet and Replacement


   Type Designator: BSZ050N03LSG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TSDSON8
 

 BSZ050N03LSG substitution

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BSZ050N03LSG Datasheet (PDF)

 ..1. Size:327K  infineon
 bsz050n03lsg.pdf pdf_icon

BSZ050N03LSG

BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 3.1. Size:325K  infineon
 bsz050n03ls.pdf pdf_icon

BSZ050N03LSG

BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 5.1. Size:318K  infineon
 bsz050n03ms.pdf pdf_icon

BSZ050N03LSG

BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

 5.2. Size:320K  infineon
 bsz050n03msg.pdf pdf_icon

BSZ050N03LSG

BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

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Datasheet: BSS84P , BSS84PW , BSV236SP , BSZ019N03LS , BSZ035N03LSG , BSZ035N03MSG , BSZ040N04LSG , BSZ042N04NSG , STP75NF75 , BSZ050N03MSG , BSZ058N03LSG , BSZ058N03MSG , BSZ067N06LS3G , BSZ076N06NS3G , BSZ086P03NS3G , BSZ086P03NS3EG , BSZ088N03LSG .

History: SUM85N15-19 | BSZ440N10NS3G | SUD50N02-06 | STY60NM60 | SM6A22NSF | AP6679BGH | ET8818

Keywords - BSZ050N03LSG MOSFET datasheet

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