BUZ31H3045A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ31H3045A datasheet

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BUZ31 H3045 A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free PG-TO263-3 BUZ31 H3045A Yes Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A 2009-11-09 Rev 2.1 BUZ31 H3045 A Rev 2.1 2009-11-09 BUZ31 H3045 A Rev

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BUZ 31 H3046 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 H3046 200 V 14.5 A 0.2 PG-TO-262-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC =

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ31H3046 FEATURES Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

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BUZ 31 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 31 H 200 V 14.5 A 0.2 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 C

Otros transistores... BSZ42DN25NS3G , BSZ440N10NS3G , BSZ520N15NS3G , BSZ900N15NS3G , BSZ900N20NS3G , BUZ30AH , BUZ30AH3045A , BUZ31H , RFP50N06 , BUZ31LH , BUZ32H , BUZ32H3045A , BUZ73H , BUZ73AH , BUZ73ALH , BUZ73LH , IPA028N08N3G .