All MOSFET. BUZ31H3045A Datasheet

 

BUZ31H3045A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ31H3045A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: D2PAK TO263

 BUZ31H3045A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ31H3045A Datasheet (PDF)

 ..1. Size:1209K  infineon
 buz31h3045a.pdf

BUZ31H3045A BUZ31H3045A

BUZ31 H3045 A. Pb-free lead plating; RoHS compliant. Halogen-free according to IEC61249-2-21Pb-freePG-TO263-3BUZ31 H3045A YesRev 2.1 2009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev 2.1 2009-11-09BUZ31 H3045 A2009-11-09Rev 2.1BUZ31 H3045 ARev 2.12009-11-09BUZ31 H3045 ARev

 5.1. Size:796K  1
 buz31h3046.pdf

BUZ31H3045A BUZ31H3045A

BUZ 31 H3046SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level. Pb-free lead plating; RoHs compliant. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 H3046 200 V 14.5 A 0.2 PG-TO-262-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC =

 5.2. Size:235K  inchange semiconductor
 buz31h3046.pdf

BUZ31H3045A BUZ31H3045A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUZ31H3046FEATURESEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 8.1. Size:388K  infineon
 buz31h.pdf

BUZ31H3045A BUZ31H3045A

BUZ 31 HSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Normal Level. Pb-free lead plating; RoHs compliant. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 31 H 200 V 14.5 A 0.2 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SUD19N20-90

 

 
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