IPA50R199CP Todos los transistores

 

IPA50R199CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPA50R199CP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 139 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm
   Paquete / Cubierta: TO220FP
 

 Búsqueda de reemplazo de IPA50R199CP MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPA50R199CP Datasheet (PDF)

 ..1. Size:327K  infineon
ipa50r199cp.pdf pdf_icon

IPA50R199CP

IPA50R199CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V!0W)EM;IJ

 ..2. Size:201K  inchange semiconductor
ipa50r199cp.pdf pdf_icon

IPA50R199CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R199CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.1. Size:2210K  infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf pdf_icon

IPA50R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

 6.2. Size:971K  infineon
ipa50r190ce.pdf pdf_icon

IPA50R199CP

IPA50R190CEMOSFETPG-TO 220 FP500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

Otros transistores... IPA075N15N3G , IPA086N10N3G , IPA093N06N3G , IPA100N08N3G , IPA105N15N3G , IPA126N10N3G , IPA180N10N3G , IPA50R140CP , 8N60 , IPA50R250CP , IPA50R299CP , IPA50R350CP , IPA50R380CE , IPA50R399CP , IPA50R520CP , IPA60R099C6 , IPA60R125C6 .

History: P0603BEAD | NVTFS4C13N | 2SK2676 | BSC070N10NS3G | BSG0813NDI | PHB20N06T | AOK095A60

 

 
Back to Top

 


 
.