All MOSFET. IPA50R199CP Datasheet

 

IPA50R199CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPA50R199CP
   Marking Code: 5R199P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO220FP

 IPA50R199CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPA50R199CP Datasheet (PDF)

 ..1. Size:327K  infineon
 ipa50r199cp.pdf

IPA50R199CP IPA50R199CP

IPA50R199CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V!0W)EM;IJ

 ..2. Size:201K  inchange semiconductor
 ipa50r199cp.pdf

IPA50R199CP IPA50R199CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R199CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.1. Size:2210K  infineon
 ipa50r190ce ipp50r190ce ipw50r190ce.pdf

IPA50R199CP IPA50R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

 6.2. Size:971K  infineon
 ipa50r190ce.pdf

IPA50R199CP IPA50R199CP

IPA50R190CEMOSFETPG-TO 220 FP500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

 6.3. Size:201K  inchange semiconductor
 ipa50r190ce.pdf

IPA50R199CP IPA50R199CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R190CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

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History: SFP9630

 

 
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