IPA60R600CP Todos los transistores

 ..1. Size:557K  infineon
 ipa60r600cp.pdf

IPA60R600CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 U )DK GH ;>H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK HM U . I6A>;> 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ;;8

 ..2. Size:200K  inchange semiconductor
 ipa60r600cp.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 4.1. Size:1224K  infineon
 ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super

 4.2. Size:1051K  infineon
 ipa60r600c6.pdf

MOSFET + =L9D - PA

 4.3. Size:225K  inchange semiconductor
 ipa60r600c6.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600C6 FEATURES With TO-220F Package Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T