IPA60R600CP Datasheet and Replacement
Type Designator: IPA60R600CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220FP
IPA60R600CP substitution
IPA60R600CP Datasheet (PDF)
ipa60r600cp.pdf

IPA60R600CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 U )DK:GH ;>H / L .ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK HMU . I6A>;>:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ;;8
ipa60r600cp.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R600C6Data SheetRev. 2.5FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R600C6, IPB60R600C6IPP60R600C6, IPA60R600C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the super
Datasheet: IPA60R380C6 , IPA60R380E6 , IPA60R385CP , IPA60R450E6 , IPA60R520C6 , IPA60R520CP , IPA60R520E6 , IPA60R600C6 , 10N60 , IPA60R600E6 , IPA60R750E6 , IPA60R950C6 , IPA65R280C6 , IPA65R280E6 , IPA65R380C6 , IPA65R380E6 , IPA65R600C6 .
History: AP4511GM | SFF240J | NCE60NF055F | BUZ83 | AOD661 | AP9972AGP | WMN30N80M3
Keywords - IPA60R600CP MOSFET datasheet
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History: AP4511GM | SFF240J | NCE60NF055F | BUZ83 | AOD661 | AP9972AGP | WMN30N80M3



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