IPA60R600CP - описание и поиск аналогов

IPA60R600CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 U )DK GH ;>H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK HM U . I6A>;> 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ;;8

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600C6 FEATURES With TO-220F Package Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T