IPB100N08S2L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB100N08S2L-07
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente (Vds): 75 V
Corriente continua de drenaje (Id): 100 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 246 nC
Resistencia drenaje-fuente RDS(on): 0.0065 Ohm
Empaquetado / Estuche: PTO263
Búsqueda de reemplazo de MOSFET IPB100N08S2L-07
IPB100N08S2L-07 Datasheet (PDF)
1.1. ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07 green.pdf 
Size:158K _infineon
IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 6.8 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche te
1.2. ipp100n08s2l-07 ipb100n08s2l-07 green.pdf Size:154K _infineon
IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Pack
2.1. ipp100n04s2-04 ipb100n04s2-04 green.pdf Size:153K _infineon
IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.3 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering C
2.2. ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Size:159K _infineon
IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m? DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking
2.3. ipb100n06s3-04.pdf Size:195K _infineon
IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.1 mΩ DS(on),max I 100 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avala
2.4. ipp100n04s2l-03 ipb100n04s2l-03 green.pdf Size:153K _infineon
IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Pack
2.5. ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf Size:196K _infineon
IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m? DS(on) I 100 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanch
Otros transistores... IPA90R500C3 , IPA90R800C3 , IPB100N04S2-04 , IPB100N04S2L-03 , IPB100N04S3-03 , IPB100N06S2-05 , IPB100N06S2L-05 , IPB100N08S2-07 , IRF9540 , IPB100N10S3-05 , IPB100P03P3L-04 , IPB120N04S3-02 , IPB120N06S4-03 , IPB160N04S2-03 , IPB160N04S2L-03 , IPB160N04S3-H2 , IPB180N03S4L-H0 .
