IPB100N08S2L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB100N08S2L-07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 75 V

Corriente continua de drenaje (Id): 100 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 246 nC

Resistencia drenaje-fuente RDS(on): 0.0065 Ohm

Empaquetado / Estuche: PTO263

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IPB100N08S2L-07 Datasheet (PDF)

1.1. ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07 green.pdf Size:158K _infineon

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS� Power-Transistor Product Summary Features V 75 V DS � N-channel - Enhancement mode R (SMD version) 6.8 m? DS(on),max � Automotive AEC Q101 qualified I 100 A D � MSL1 up to 260�C peak reflow � 175�C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 � Green package (lead free) � Ultra low Rds(on) � 100% Avalanche te

1.2. ipp100n08s2l-07 ipb100n08s2l-07 green.pdf Size:154K _infineon

IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS� Power-Transistor Product Summary Features V 75 V DS � N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m? DS(on),max � Automotive AEC Q101 qualified I 100 A D � MSL1 up to 260�C peak reflow � 175�C operating temperature PG-TO263-3-2 PG-TO220-3-1 � Green package (lead free) � Ultra low Rds(on) � 100% Avalanche tested Type Pack

2.1. ipp100n04s2-04 ipb100n04s2-04 green.pdf Size:153K _infineon

IPB100N04S2-04 IPP100N04S2-04 OptiMOS� Power-Transistor Product Summary Features V 40 V DS � N-channel - Enhancement mode R (SMD version) 3.3 m? DS(on),max � Automotive AEC Q101 qualified I 100 A D � MSL1 up to 260�C peak reflow � 175�C operating temperature PG-TO263-3-2 PG-TO220-3-1 � Green package (lead free) � Ultra low Rds(on) � 100% Avalanche tested Type Package Ordering C

2.2. ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Size:159K _infineon

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS�-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m? DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � N-channel - Enhancement mode � AEC qualified � MSL1 up to 260�C peak reflow � 175�C operating temperature � Green Product (RoHS compliant) � 100% Avalanche tested Type Package Marking

2.3. ipb100n06s3-04.pdf Size:195K _infineon

IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.1 mΩ DS(on),max I 100 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avala

2.4. ipp100n04s2l-03 ipb100n04s2l-03 green.pdf Size:153K _infineon

IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS� Power-Transistor Product Summary Features V 40 V DS � N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m? DS(on),max � Automotive AEC Q101 qualified I 100 A D � MSL1 up to 260�C peak reflow � 175�C operating temperature PG-TO263-3-2 PG-TO220-3-1 � Green package (lead free) � Ultra low Rds(on) � 100% Avalanche tested Type Pack

2.5. ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf Size:196K _infineon

IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS�-T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m? DS(on) I 100 A D Features � N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 � Automotive AEC Q101 qualified � MSL1 up to 260�C peak reflow � 175�C operating temperature � Green package (RoHS compliant) � Ultra low Rds(on) � 100% Avalanch

Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

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