IPB100N08S2L-07 Todos los transistores

 

IPB100N08S2L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB100N08S2L-07

Código: PN08L07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 182 nC

Tiempo de elevación (tr): 56 nS

Conductancia de drenaje-sustrato (Cd): 1300 pF

Resistencia drenaje-fuente RDS(on): 0.0065 Ohm

Empaquetado / Estuche: TO263

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IPB100N08S2L-07 Datasheet (PDF)

1.1. ipp100n08s2l-07 ipb100n08s2l-07 green.pdf Size:154K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Pack

1.2. ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07 green.pdf Size:158K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 6.8 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche te

 2.1. ipb100n06s2l-05 ipp100n06s2l-05.pdf Size:159K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 4.4 mΩ DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avala

2.2. ipp100n04s2l-03 ipb100n04s2l-03 green.pdf Size:153K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Pack

 2.3. ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf Size:196K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m? DS(on) I 100 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanch

2.4. ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Size:159K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m? DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

 2.5. ipp100n04s2-04 ipb100n04s2-04 green.pdf Size:153K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.3 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering C

2.6. ipb100n06s3-04.pdf Size:195K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.1 mΩ DS(on),max I 100 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avala

2.7. ipb100n06s2-05 ipp100n06s2-05.pdf Size:155K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N06S2-05 IPP100N06S2-05 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 4.7 mΩ DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested T

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