All MOSFET. IPB100N08S2L-07 Datasheet

 

IPB100N08S2L-07 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB100N08S2L-07

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Drain Current |Id|: 100 A

Total Gate Charge (Qg): 246 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: PTO263

IPB100N08S2L-07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB100N08S2L-07 Datasheet (PDF)

1.1. ipp100n08s2l-07 ipb100n08s2l-07 green.pdf Size:154K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Pack

1.2. ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07 green.pdf Size:158K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 6.8 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche te

 2.1. ipp100n04s2l-03 ipb100n04s2l-03 green.pdf Size:153K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Pack

2.2. ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf Size:196K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS-T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m? DS(on) I 100 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanch

 2.3. ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Size:159K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m? DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

2.4. ipp100n04s2-04 ipb100n04s2-04 green.pdf Size:153K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.3 m? DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering C

 2.5. ipb100n06s3-04.pdf Size:195K _infineon

IPB100N08S2L-07
IPB100N08S2L-07

IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.1 mΩ DS(on),max I 100 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avala

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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