IPB100P03P3L-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

0.1. Size:195K infineon
ipb100p03p3l-04 ipi100p03p3l-04 ipp100p03p3l-04.pdf pdf_icon

IPB100P03P3L-04IPI100P03P3L-04, IPP100P03P3L-04OptiMOS-P Trench Power-TransistorProduct SummaryV -30 VDSFeaturesR (SMD version) 4mDS(on),max P-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified I -100 AD MSL1 up to 260C peak reflowPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 175C operating temperature Green package (RoHS Comp

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IPB100N10S3-05IPI100N10S3-05, IPP100N10S3-05OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 4.8mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval

8.2. Size:159K infineon
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IPB100N06S2L-05IPP100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.4mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

8.3. Size:159K infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

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IPB100N08S2-07IPP100N08S2-07, IPI100N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

8.5. Size:153K infineon
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IPB100N04S2-04IPP100N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.3mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT

8.6. Size:195K infineon
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IPB100N06S3-04IPI100N06S3-04, IPP100N06S3-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 4.1mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avala

8.7. Size:135K infineon
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IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType

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IPB100N04S3-03IPI100N04S3-03, IPP100N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD Version) 2.5mDS(on) I 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(

8.9. Size:154K infineon
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IPB100N08S2L-07IPP100N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.5mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

8.10. Size:191K infineon
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IPB100N10S3-05IPI100N10S3-05, IPP100N10S3-05OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 4.8mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval

8.11. Size:405K infineon
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IPB100N12S3-05IPI100N12S3-05, IPP100N12S3-05OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 4.8 mW ID 100 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper

8.12. Size:153K infineon
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IPB100N04S2L-03IPP100N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.0mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

8.13. Size:155K infineon
ipb100n06s2-05 ipp100n06s2-05.pdf pdf_icon

IPB100N06S2-05IPP100N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT

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