Справочник MOSFET. IPB100P03P3L-04

 

IPB100P03P3L-04 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPB100P03P3L-04
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 2150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

IPB100P03P3L-04 Datasheet (PDF)

 0.1. Size:195K  infineon
 ipb100p03p3l-04 ipi100p03p3l-04 ipp100p03p3l-04.pdf pdf_icon

IPB100P03P3L-04

IPB100P03P3L-04IPI100P03P3L-04, IPP100P03P3L-04OptiMOS-P Trench Power-TransistorProduct SummaryV -30 VDSFeaturesR (SMD version) 4mDS(on),max P-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified I -100 AD MSL1 up to 260C peak reflowPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 175C operating temperature Green package (RoHS Comp

 8.1. Size:186K  infineon
 ipb100n10s3-05 ipi100n10s3-05 ipp100n10s3-05.pdf pdf_icon

IPB100P03P3L-04

IPB100N10S3-05IPI100N10S3-05, IPP100N10S3-05OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 4.8mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval

 8.2. Size:159K  infineon
 ipb100n06s2l-05 ipp100n06s2l-05.pdf pdf_icon

IPB100P03P3L-04

IPB100N06S2L-05IPP100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.4mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

 8.3. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPB100P03P3L-04

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

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