All MOSFET. IPB100P03P3L-04 Datasheet

 

IPB100P03P3L-04 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB100P03P3L-04
   Marking Code: 3P03L04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 2150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263

 IPB100P03P3L-04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB100P03P3L-04 Datasheet (PDF)

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