IPB180N06S4-H1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB180N06S4-H1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 4120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Encapsulados: TO263-7
Búsqueda de reemplazo de IPB180N06S4-H1 MOSFET
- Selecciónⓘ de transistores por parámetros
IPB180N06S4-H1 datasheet
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf
IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N0
ipb180n04s4-00.pdf
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf
IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N
ipb180n08s4-02.pdf
IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08
Otros transistores... IPB120N04S3-02, IPB120N06S4-03, IPB160N04S2-03, IPB160N04S2L-03, IPB160N04S3-H2, IPB180N03S4L-H0, IPB180N04S3-02, IPB180N04S4-00, IRFB3607, IPB22N03S4L-15, IPB45N06S4-09, IPB45N06S4L-08, IPB45P03P4L-11, IPB47N10S-33, IPB47N10SL-26, IPB50N10S3L-16, IPB70N04S3-07
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