IPB180N06S4-H1 PDF and Equivalents Search

 

IPB180N06S4-H1 Specs and Replacement

Type Designator: IPB180N06S4-H1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 4120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: TO263-7

IPB180N06S4-H1 substitution

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IPB180N06S4-H1 datasheet

 ..1. Size:176K  infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf pdf_icon

IPB180N06S4-H1

IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N0... See More ⇒

 6.1. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180N06S4-H1

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim... See More ⇒

 6.2. Size:161K  infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf pdf_icon

IPB180N06S4-H1

IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N... See More ⇒

 6.3. Size:201K  infineon
ipb180n08s4-02.pdf pdf_icon

IPB180N06S4-H1

IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08... See More ⇒

Detailed specifications: IPB120N04S3-02, IPB120N06S4-03, IPB160N04S2-03, IPB160N04S2L-03, IPB160N04S3-H2, IPB180N03S4L-H0, IPB180N04S3-02, IPB180N04S4-00, IRFB3607, IPB22N03S4L-15, IPB45N06S4-09, IPB45N06S4L-08, IPB45P03P4L-11, IPB47N10S-33, IPB47N10SL-26, IPB50N10S3L-16, IPB70N04S3-07

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