APT50M50PVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50M50PVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 74.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 2210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: PPACK
Búsqueda de reemplazo de APT50M50PVR MOSFET
APT50M50PVR Datasheet (PDF)
apt50m50pvr.pdf

APT50M50PVR500V 74.5A 0.050POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
apt50m50jvfr.pdf

APT50M50JVFR500V 77A 0.050POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
apt50m50jll.pdf

APT50M50JLL500V 71A 0.050R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionally
apt50m50.pdf

APT50M50PVR500V 74.5A 0.050POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
Otros transistores... APT5026HVR , APT5028BVR , APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR , IRFZ46N , APT50M60JN , APT50M85JVFR , APT50M85JVR , APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR .
History: IRFI624A | APT50M50JVR | BUK555-100B | IRLMS6802 | FDZ375P | IPU60R1K5CE | 2N6758JTXV
History: IRFI624A | APT50M50JVR | BUK555-100B | IRLMS6802 | FDZ375P | IPU60R1K5CE | 2N6758JTXV



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