APT50M50PVR. Аналоги и основные параметры
Наименование производителя: APT50M50PVR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 74.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 2210 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: PPACK
Аналог (замена) для APT50M50PVR
- подборⓘ MOSFET транзистора по параметрам
APT50M50PVR даташит
..1. Size:36K apt
apt50m50pvr.pdf 

APT50M50PVR 500V 74.5A 0.050 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
6.2. Size:77K apt
apt50m50jll.pdf 

APT50M50JLL 500V 71A 0.050 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptionally
6.3. Size:36K apt
apt50m50.pdf 

APT50M50PVR 500V 74.5A 0.050 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
6.4. Size:95K apt
apt50m50l2llg.pdf 

APT50M50L2LL 500V 89A 0.050 R POWER MOS 7 MOSFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fa
6.5. Size:71K apt
apt50m50jfll.pdf 

APT50M50JFLL 500V 71A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit
6.6. Size:95K apt
apt50m50l2fllg.pdf 

APT50M50L2FLL 500V 89A 0.050 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
6.7. Size:71K apt
apt50m50jvr.pdf 

APT50M50JVR 500V 77A 0.050 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche
6.8. Size:63K apt
apt50m50l2ll.pdf 

APT50M50L2LL 500V 87A 0.050W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
6.9. Size:34K apt
apt50m50jlc.pdf 

APT50M50JLC 500V 77A 0.050 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT
6.10. Size:65K apt
apt50m50l2fll.pdf 

APT50M50L2FLL 500V 89A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds
Другие IGBT... APT5026HVR, APT5028BVR, APT5028SVR, APT5030AVR, APT5032CVR, APT5040CNR, APT50M50JVFR, APT50M50JVR, SI2302, APT50M60JN, APT50M85JVFR, APT50M85JVR, APT6013JVR, APT6015B2VR, APT6015JN, APT6015JVR, APT6015LVR