All MOSFET. APT50M50PVR Datasheet

 

APT50M50PVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT50M50PVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 625 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 74.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 690 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 2210 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: PPACK

APT50M50PVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT50M50PVR Datasheet (PDF)

1.1. apt50m50pvr.pdf Size:36K _apt

APT50M50PVR
APT50M50PVR

APT50M50PVR 500V 74.5A 0.050Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

2.1. apt50m50l2llg.pdf Size:95K _update_mosfet

APT50M50PVR
APT50M50PVR

APT50M50L2LL Ω 500V 89A 0.050Ω Ω Ω Ω R POWER MOS 7 MOSFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fa

2.2. apt50m50l2fllg.pdf Size:95K _update_mosfet

APT50M50PVR
APT50M50PVR

APT50M50L2FLL Ω 500V 89A 0.050Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

 2.3. apt50m50jll.pdf Size:77K _update_mosfet

APT50M50PVR
APT50M50PVR

APT50M50JLL Ω 500V 71A 0.050Ω Ω Ω Ω R POWER MOS 7 MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses "UL Recognized" along with exceptionally

2.4. apt50m50l2ll.pdf Size:63K _apt

APT50M50PVR
APT50M50PVR

APT50M50L2LL 500V 87A 0.050W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

 2.5. apt50m50jlc.pdf Size:34K _apt

APT50M50PVR
APT50M50PVR

APT50M50JLC 500V 77A 0.050 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT

2.6. apt50m50.pdf Size:36K _apt

APT50M50PVR
APT50M50PVR

APT50M50PVR 500V 74.5A 0.050Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

2.7. apt50m50jvfr.pdf Size:73K _apt

APT50M50PVR
APT50M50PVR

APT50M50JVFR 500V 77A 0.050Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

2.8. apt50m50l2fll.pdf Size:65K _apt

APT50M50PVR
APT50M50PVR

APT50M50L2FLL 500V 89A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

2.9. apt50m50jvr.pdf Size:71K _apt

APT50M50PVR
APT50M50PVR

APT50M50JVR 500V 77A 0.050Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

2.10. apt50m50jfll.pdf Size:71K _apt

APT50M50PVR
APT50M50PVR

APT50M50JFLL 500V 71A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

Datasheet: APT5026HVR , APT5028BVR , APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR , IRFZ44A , APT50M60JN , APT50M85JVFR , APT50M85JVR , APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR .

 

 
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