APT50M50PVR Specs and Replacement
Type Designator: APT50M50PVR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 74.5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 2210
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package: PPACK
-
MOSFET ⓘ Cross-Reference Search
APT50M50PVR datasheet
..1. Size:36K apt
apt50m50pvr.pdf 
APT50M50PVR 500V 74.5A 0.050 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low... See More ⇒
6.2. Size:77K apt
apt50m50jll.pdf 
APT50M50JLL 500V 71A 0.050 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptionally... See More ⇒
6.3. Size:36K apt
apt50m50.pdf 
APT50M50PVR 500V 74.5A 0.050 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low... See More ⇒
6.4. Size:95K apt
apt50m50l2llg.pdf 
APT50M50L2LL 500V 89A 0.050 R POWER MOS 7 MOSFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fa... See More ⇒
6.5. Size:71K apt
apt50m50jfll.pdf 
APT50M50JFLL 500V 71A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit... See More ⇒
6.6. Size:95K apt
apt50m50l2fllg.pdf 
APT50M50L2FLL 500V 89A 0.050 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally ... See More ⇒
6.7. Size:71K apt
apt50m50jvr.pdf 
APT50M50JVR 500V 77A 0.050 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche ... See More ⇒
6.8. Size:63K apt
apt50m50l2ll.pdf 
APT50M50L2LL 500V 87A 0.050W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent ... See More ⇒
6.9. Size:34K apt
apt50m50jlc.pdf 
APT50M50JLC 500V 77A 0.050 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast switching speeds. ISOT... See More ⇒
6.10. Size:65K apt
apt50m50l2fll.pdf 
APT50M50L2FLL 500V 89A 0.050W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds... See More ⇒
Detailed specifications: APT5026HVR
, APT5028BVR
, APT5028SVR
, APT5030AVR
, APT5032CVR
, APT5040CNR
, APT50M50JVFR
, APT50M50JVR
, SI2302
, APT50M60JN
, APT50M85JVFR
, APT50M85JVR
, APT6013JVR
, APT6015B2VR
, APT6015JN
, APT6015JVR
, APT6015LVR
.
Keywords - APT50M50PVR MOSFET specs
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