IPB034N03LG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB034N03LG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.4 nS

Cossⓘ - Capacitancia de salida: 1400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: TO263

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IPB034N03LG datasheet

 ..1. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf pdf_icon

IPB034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 4.1. Size:723K  infineon
 ipb034n03l ipp034n03l.pdf pdf_icon

IPB034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 4.2. Size:243K  inchange semiconductor
 ipb034n03l .pdf pdf_icon

IPB034N03LG

isc N-Channel MOSFET Transistor IPB034N03L DESCRIPTION Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY

 4.3. Size:243K  inchange semiconductor
 ipb034n03l.pdf pdf_icon

IPB034N03LG

isc N-Channel MOSFET Transistor IPB034N03L DESCRIPTION Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY

MOSTRAR MÁS

Otros transistores... IPB023N04NG, IPB023N06N3G, IPB025N08N3G, IPB025N10N3G, IPB027N10N3G, IPB029N06N3G, IPB030N08N3G, IPB031NE7N3G, AO3400, IPB034N06L3G, IPB034N06N3G, IPB035N08N3G, IPB036N12N3G, IPB037N06N3G, IPB038N12N3G, IPB039N04LG, IPB039N10N3G