All MOSFET. IPB034N03LG Datasheet

 

IPB034N03LG Datasheet and Replacement


   Type Designator: IPB034N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO263
 

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IPB034N03LG Datasheet (PDF)

 ..1. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf pdf_icon

IPB034N03LG

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 4.1. Size:723K  infineon
 ipb034n03l ipp034n03l.pdf pdf_icon

IPB034N03LG

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 4.2. Size:243K  inchange semiconductor
 ipb034n03l .pdf pdf_icon

IPB034N03LG

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

 4.3. Size:243K  inchange semiconductor
 ipb034n03l.pdf pdf_icon

IPB034N03LG

isc N-Channel MOSFET Transistor IPB034N03LDESCRIPTIONDrain Current :I = 80A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

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Datasheet: IPB023N04NG , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IRF3710 , IPB034N06L3G , IPB034N06N3G , IPB035N08N3G , IPB036N12N3G , IPB037N06N3G , IPB038N12N3G , IPB039N04LG , IPB039N10N3G .

History: IRF3709ZS

Keywords - IPB034N03LG MOSFET datasheet

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