IPB075N04LG Todos los transistores

 4.1. Size:445K  infineon
 ipb075n04l.pdf

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 9.1. Size:736K  infineon
 ipb070n06lg ipp070n06lg7.pdf

 9.2. Size:980K  infineon
 ipb073n15n5.pdf

IPB073N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q ) rr 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synch

 9.3. Size:162K  infineon
 ipp07n03l ipb07n03l.pdf

IPP07N03L IPB07N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 5.9 m Logic Level ID 80 A Low On-Resistance RDS(on) P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ideal for f

 9.4. Size:894K  infineon
 ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf

IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1

 9.5. Size:739K  infineon
 ipb072n15n3g ipp075n15n3g ipi075n15n3g.pdf

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1

 9.6. Size:424K  infineon
 ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 7.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar

 9.7. Size:205K  inchange semiconductor
 ipb073n15n5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB073N15N5 FEATURES With TO-263(D2PAK) packaging Very low reverse recovery charge High speed switching Very low on-resistence Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 9.8. Size:258K  inchange semiconductor
 ipb072n15n3g.pdf

Isc N-Channel MOSFET Transistor IPB072N15N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source