IPB075N04LG
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB075N04LG
Marking Code: 075N04L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 27
nC
trⓘ - Rise Time: 3.4
nS
Cossⓘ -
Output Capacitance: 400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
TO263
IPB075N04LG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB075N04LG
Datasheet (PDF)
4.1. Size:445K infineon
ipb075n04l.pdf
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9.1. Size:736K infineon
ipb070n06lg ipp070n06lg7.pdf
IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C
9.2. Size:980K infineon
ipb073n15n5.pdf
IPB073N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Q )rr 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synch
9.3. Size:162K infineon
ipp07n03l ipb07n03l.pdf
IPP07N03LIPB07N03LOptiMOS Buck converter seriesProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 5.9 m Logic LevelID 80 A Low On-Resistance RDS(on)P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for f
9.4. Size:894K infineon
ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf
IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1
9.6. Size:424K infineon
ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf
IPB072N15N3 G IPP075N15N3 GIPI075N15N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 7.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar
9.7. Size:205K inchange semiconductor
ipb073n15n5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB073N15N5FEATURESWith TO-263(D2PAK) packagingVery low reverse recovery chargeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
9.8. Size:258K inchange semiconductor
ipb072n15n3g.pdf
Isc N-Channel MOSFET Transistor IPB072N15N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
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