IPB080N03LG Specs and Replacement

Type Designator: IPB080N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO263

IPB080N03LG substitution

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IPB080N03LG datasheet

 4.1. Size:726K  infineon
 ipb080n03l.pdf pdf_icon

IPB080N03LG

Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒

 4.2. Size:243K  inchange semiconductor
 ipb080n03l.pdf pdf_icon

IPB080N03LG

isc N-Channel MOSFET Transistor IPB080N03L DESCRIPTION Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY... See More ⇒

 6.1. Size:739K  infineon
 ipb080n06ng ipp080n06ng.pdf pdf_icon

IPB080N03LG

IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1... See More ⇒

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Detailed specifications: IPB05CN10NG, IPB065N03LG, IPB065N06LG, IPB065N15N3G, IPB067N08N3G, IPB06CN10NG, IPB072N15N3G, IPB075N04LG, 12N60, IPB080N06NG, IPB081N06L3G, IPB083N10N3G, IPB08CNE8NG, IPB090N06N3G, IPB093N04LG, IPB096N03LG, IPB097N08N3G

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