IPB080N03LG Datasheet and Replacement
Type Designator: IPB080N03LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 580 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
IPB080N03LG substitution
IPB080N03LG Datasheet (PDF)
ipb080n03l.pdf

Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
ipb080n03l.pdf

isc N-Channel MOSFET Transistor IPB080N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY
ipb080n06ng ipp080n06ng.pdf

IPB080N06N G IPP080N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1
Datasheet: IPB05CN10NG , IPB065N03LG , IPB065N06LG , IPB065N15N3G , IPB067N08N3G , IPB06CN10NG , IPB072N15N3G , IPB075N04LG , IRF1010E , IPB080N06NG , IPB081N06L3G , IPB083N10N3G , IPB08CNE8NG , IPB090N06N3G , IPB093N04LG , IPB096N03LG , IPB097N08N3G .
History: HGA080N10A | HGA059N08A | SPP08P06P | RFM12N10L | NP89N04PUK | IXTP44P15T | IXTP42N15T
Keywords - IPB080N03LG MOSFET datasheet
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History: HGA080N10A | HGA059N08A | SPP08P06P | RFM12N10L | NP89N04PUK | IXTP44P15T | IXTP42N15T



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