IPB080N03LG - параметры транзистора MOSFET, его аналоги, datasheet

IPB080N03LG Datasheet (PDF)

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Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

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isc N-Channel MOSFET Transistor IPB080N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

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IPB080N06N G IPP080N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

Другие MOSFET... IPB05CN10NG , IPB065N03LG , IPB065N06LG , IPB065N15N3G , IPB067N08N3G , IPB06CN10NG , IPB072N15N3G , IPB075N04LG , 4N60 , IPB080N06NG , IPB081N06L3G , IPB083N10N3G , IPB08CNE8NG , IPB090N06N3G , IPB093N04LG , IPB096N03LG , IPB097N08N3G .