IPB160N04S4-H1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB160N04S4-H1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 167 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 1800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: TO263-7

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IPB160N04S4-H1 datasheet

 ..1. Size:122K  infineon
 ipb160n04s4-h1.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 mW DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1

 ..2. Size:162K  infineon
 ipb160n04s4-h1 ds 1 0.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1

 3.1. Size:200K  infineon
 ipb160n04s4l-h1.pdf pdf_icon

IPB160N04S4-H1

Data Sheet IPB160N04S4L-H1 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 160 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB160N04S4L-H1 PG-TO263-7-3 4N04LH1 Ma

 4.1. Size:145K  infineon
 ipb160n04s2-03.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S2-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R 2.9 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code Marking IPB1

MOSTRAR MÁS

Otros transistores... IPB120N06NG, IPB120N06S4-02, IPB120N06S4-H1, IPB123N10N3G, IPB12CNE8NG, IPB136N08N3G, IPB144N12N3G, IPB147N03LG, 18N50, IPB16CN10NG, IPB180N03S4L-01, IPB180N04S4-01, IPB180N04S4-H0, IPB200N15N3G, IPB200N25N3G, IPB230N06L3G, IPB260N06N3G