All MOSFET. IPB160N04S4-H1 Datasheet

 

IPB160N04S4-H1 Datasheet and Replacement


   Type Designator: IPB160N04S4-H1
   Marking Code: 4N04H1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 105 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO263-7
 

 IPB160N04S4-H1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPB160N04S4-H1 Datasheet (PDF)

 ..1. Size:122K  infineon
 ipb160n04s4-h1.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mWDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

 ..2. Size:162K  infineon
 ipb160n04s4-h1 ds 1 0.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

 3.1. Size:200K  infineon
 ipb160n04s4l-h1.pdf pdf_icon

IPB160N04S4-H1

Data Sheet IPB160N04S4L-H1OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.5mID 160 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB160N04S4L-H1 PG-TO263-7-3 4N04LH1Ma

 4.1. Size:145K  infineon
 ipb160n04s2-03.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S2-03OptiMOS - T Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 2.9mDS(on),max Automotive AEC Q101 qualifiedI 160 AD MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free)PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche testedType Package Ordering Code MarkingIPB1

SHOW MORE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - IPB160N04S4-H1 MOSFET datasheet

 IPB160N04S4-H1 cross reference
 IPB160N04S4-H1 equivalent finder
 IPB160N04S4-H1 lookup
 IPB160N04S4-H1 substitution
 IPB160N04S4-H1 replacement

 

 
Back to Top

 


 
.