IPB160N04S4-H1 PDF and Equivalents Search

 

IPB160N04S4-H1 Specs and Replacement

Type Designator: IPB160N04S4-H1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 1800 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: TO263-7

IPB160N04S4-H1 substitution

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IPB160N04S4-H1 datasheet

 ..1. Size:122K  infineon
ipb160n04s4-h1.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 mW DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1 ... See More ⇒

 ..2. Size:162K  infineon
ipb160n04s4-h1 ds 1 0.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1... See More ⇒

 3.1. Size:200K  infineon
ipb160n04s4l-h1.pdf pdf_icon

IPB160N04S4-H1

Data Sheet IPB160N04S4L-H1 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 160 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB160N04S4L-H1 PG-TO263-7-3 4N04LH1 Ma... See More ⇒

 4.1. Size:145K  infineon
ipb160n04s2-03.pdf pdf_icon

IPB160N04S4-H1

IPB160N04S2-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R 2.9 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code Marking IPB1... See More ⇒

Detailed specifications: IPB120N06NG , IPB120N06S4-02 , IPB120N06S4-H1 , IPB123N10N3G , IPB12CNE8NG , IPB136N08N3G , IPB144N12N3G , IPB147N03LG , 18N50 , IPB16CN10NG , IPB180N03S4L-01 , IPB180N04S4-01 , IPB180N04S4-H0 , IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , IPB260N06N3G .

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