IPB260N06N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB260N06N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0257 Ohm

Encapsulados: TO263

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IPB260N06N3G datasheet

 3.1. Size:296K  infineon
 ipb260n06n3-g ipp260n06n3-g.pdf pdf_icon

IPB260N06N3G

Type IPB260N06N3 G IPP260N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 26 m DS(on),max Optimized technology for DC/DC converters I 27 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie

 9.1. Size:1032K  infineon
 ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf pdf_icon

IPB260N06N3G

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 9.2. Size:707K  infineon
 ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf pdf_icon

IPB260N06N3G

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 25 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 9.3. Size:258K  inchange semiconductor
 ipb26cn10n.pdf pdf_icon

IPB260N06N3G

Isc N-Channel MOSFET Transistor IPB26CN10N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

MOSTRAR MÁS

Otros transistores... IPB160N04S4-H1, IPB16CN10NG, IPB180N03S4L-01, IPB180N04S4-01, IPB180N04S4-H0, IPB200N15N3G, IPB200N25N3G, IPB230N06L3G, P60NF06, IPB26CN10NG, IPB320N20N3G, IPB34CN10NG, IPB45N04S4L-08, IPB50CN10NG, IPB50R140CP, IPB50R199CP, IPB50R250CP