IPB260N06N3G Datasheet and Replacement. Cross Reference Search

IPB260N06N3G Datasheet (PDF)

3.1. Size:296K infineon
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Type IPB260N06N3 G IPP260N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 26mDS(on),max Optimized technology for DC/DC convertersI 27 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie

9.1. Size:1032K infineon
ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf pdf_icon

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

9.2. Size:707K infineon
ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf pdf_icon

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G IPU25CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 25mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 35 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

9.3. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB26CN10NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: IPB160N04S4-H1 , IPB16CN10NG , IPB180N03S4L-01 , IPB180N04S4-01 , IPB180N04S4-H0 , IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , AO3401 , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP .