IPB60R160C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB60R160C6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 176 W

Tensión drenaje-fuente (Vds): 600 V

Corriente continua de drenaje (Id): 23.8 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 75 nC

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: D2PAK_TO263

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IPB60R160C6 Datasheet (PDF)

1.1. ipb60r160c6 2 1.pdf Size:1723K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS� C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS� C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS� is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (

2.1. ipb60r165cp rev21.pdf Size:348K _infineon

IPB60R165CP CoolMOS� Power Transistor Product Summary Features V @ Tj,max 650 V DS � Lowest figure-of-merit RONxQg R 0.165 ? DS(on),max � Ultra low gate charge Q 39 nC g,typ � Extreme dv/dt rated � High peak current capability � Qualified according to JEDEC1) for target applications PG-TO263 � Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: � Hard swit

3.1. ipb60r199cpa.pdf Size:427K _infineon

IPB60R199CPA CoolMOS� Power Transistor Product Summary V 600 V DS R 0.199 ? DS(on),max Q 33 nC g,typ Features � Lowest figure-of-merit Ron x Qg � Ultra low gate charge � Extreme dv/dt rated PG-TO263-3 � High peak current capability � Automotive AEC Q101 qualified � Green package (RoHS compliant) CoolMOS CPA is specially designed for: � DC/DC converters for Automotive Applications

3.2. ipb60r125c6 2 1.pdf Size:1396K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2

3.3. ipb60r125cp rev1.0a.pdf Size:357K _infineon

IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS � Lowest figure-of-merit RONxQg R 0.125 ? DS(on),max � Ultra low gate charge Q 53 nC g,typ � Extreme dv/dt rated � High peak current capability � Qualified according to JEDEC1) for target applications PG-TO263 � Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: � Hard sw

3.4. ipb60r199cp rev2.1a.pdf Size:568K _infineon

IPB60R199CP C??IMOS� #:A0< &<,9=4=>:< #<:/?.> %?88,7G=; nC g typ V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V / J7B?

3.5. ipb60r190c6 2 1.pdf Size:1495K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS� C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS� C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS� is a revolutionary technology for high voltage power MOSFETs, designed according to the s

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