IPB60R160C6 Specs and Replacement
Type Designator: IPB60R160C6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO263
IPB60R160C6 substitution
- MOSFET ⓘ Cross-Reference Search
IPB60R160C6 datasheet
ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunct... See More ⇒
ipb60r160c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superj... See More ⇒
ipb60r160c6.pdf
Isc N-Channel MOSFET Transistor IPB60R160C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒
Detailed specifications: IPB50R299CP, IPB530N15N3G, IPB600N25N3G, IPB60R099C6, IPB60R099CP, IPB60R099CPA, IPB60R125C6, IPB60R125CP, MMIS60R580P, IPB60R165CP, IPB60R190C6, IPB60R199CP, IPB60R199CPA, IPB60R250CP, IPB60R280C6, IPB60R299CP, IPB60R299CPA
Keywords - IPB60R160C6 MOSFET specs
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