Справочник MOSFET. IPB60R160C6

 

IPB60R160C6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB60R160C6
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 176 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IPB60R160C6

 

 

IPB60R160C6 Datasheet (PDF)

 ..1. Size:1019K  infineon
ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf

IPB60R160C6
IPB60R160C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct

 ..2. Size:1723K  infineon
ipb60r160c6.pdf

IPB60R160C6
IPB60R160C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

 ..3. Size:258K  inchange semiconductor
ipb60r160c6.pdf

IPB60R160C6
IPB60R160C6

Isc N-Channel MOSFET Transistor IPB60R160C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 5.1. Size:2645K  infineon
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf

IPB60R160C6
IPB60R160C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPB60R160P6, IPP60R160P6,IPA60R160P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 5.2. Size:258K  inchange semiconductor
ipb60r160p6.pdf

IPB60R160C6
IPB60R160C6

Isc N-Channel MOSFET Transistor IPB60R160P6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 6.1. Size:348K  infineon
ipb60r165cp.pdf

IPB60R160C6
IPB60R160C6

IPB60R165CPCoolMOS Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.165DS(on),max Ultra low gate chargeQ 39 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designed

 6.2. Size:227K  inchange semiconductor
ipb60r165cp.pdf

IPB60R160C6
IPB60R160C6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB60R165CPFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant sw

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